Stacking SiO2/ High-$K$ Dielectric Material in 30nm Junction-less Nanowire Transistor Optimized Using Taguchi Method for Lower Leakage Current

التفاصيل البيبلوغرافية
العنوان: Stacking SiO2/ High-$K$ Dielectric Material in 30nm Junction-less Nanowire Transistor Optimized Using Taguchi Method for Lower Leakage Current
المؤلفون: Rasol, M. F. M., Hamid, F. K. A., Johari, Zaharah, Alias, N. Ezaila, Ismail, Razali
المصدر: 2019 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Micro and Nanoelectronics (RSM), 2019 IEEE Regional Symposium on. :1-4 Aug, 2019
Relation: 2019 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)
قاعدة البيانات: IEEE Xplore Digital Library