Defect Evaluation of O2-annealed TaOx for Transparent ReRAM with High Resistance Ratio $(R_{\mathrm{HRS}}/R_{\mathrm{LRS}}>10^{9}$

التفاصيل البيبلوغرافية
العنوان: Defect Evaluation of O2-annealed TaOx for Transparent ReRAM with High Resistance Ratio $(R_{\mathrm{HRS}}/R_{\mathrm{LRS}}>10^{9}$
المؤلفون: Doko, Soshun, Suda, Yoriko, Ishii, Yoshiaki, Moniwa, Masahiro
المصدر: 2019 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Electron Devices, Kansai (IMFEDK), 2019 IEEE International Meeting for Future of. :75-76 Nov, 2019
Relation: 2019 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781728131634
DOI:10.1109/IMFEDK48381.2019.8950706