دورية أكاديمية
Temperature-Compensated MOS Dosimeter Fully Integrated in a High-Voltage 0.35 μm CMOS Process
| العنوان: | Temperature-Compensated MOS Dosimeter Fully Integrated in a High-Voltage 0.35 μm CMOS Process |
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| المؤلفون: | Carbonetto, S., Echarri, M., Lipovetzky, J., Garcia-Inza, M., Faigon, A. |
| المصدر: | IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 67(6):1118-1124 Jun, 2020 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 00189499 15581578 |
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| DOI: | 10.1109/TNS.2020.2966567 |