دورية أكاديمية
Surface Leakage Behaviors of $2.6~\mu$ m In0.83Ga0.17As Photodetectors as a Function of Mesa Etching Depth
| العنوان: | Surface Leakage Behaviors of $2.6~\mu$ m In0.83Ga0.17As Photodetectors as a Function of Mesa Etching Depth |
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| المؤلفون: | Liu, Y., Ma, Y., Li, X., Gu, Y., Zhang, Y., Gong, H., Fang, J. |
| المصدر: | IEEE Journal of Quantum Electronics IEEE J. Quantum Electron. Quantum Electronics, IEEE Journal of. 56(2):1-6 Apr, 2020 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 00189197 15581713 |
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| DOI: | 10.1109/JQE.2020.2970745 |