Molecular Beam Epitaxy of Wide-Bandgap InAlAsSb on InP Substrates for an All Lattice-Matched Triple-Junction Solar Cell

التفاصيل البيبلوغرافية
العنوان: Molecular Beam Epitaxy of Wide-Bandgap InAlAsSb on InP Substrates for an All Lattice-Matched Triple-Junction Solar Cell
المؤلفون: Tomasulo, S., Gonzalez, M., Lumb, M. P., Twigg, M. E., Vurgaftman, I., Meyer, J. R., Walters, R. J., Yakes, M. K.
المصدر: 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) Photovoltaic Specialists Conference (PVSC), 2019 IEEE 46th. :3187-3190 Jun, 2019
Relation: 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781728104942
DOI:10.1109/PVSC40753.2019.8980506