Ge oxide scavenging and gate stack nitridation for strained Si0.7Ge0.3 pFinFETs enabling 35% higher mobility than Si

التفاصيل البيبلوغرافية
العنوان:	Ge oxide scavenging and gate stack nitridation for strained Si0.7Ge0.3 pFinFETs enabling 35% higher mobility than Si
المؤلفون:	Arimura, H., Wostyn, K., Ragnarsson, L.-A., Capogreco, E., Chasin, A., Conard, T., Brus, S., Favia, P., Franco, J., Mitard, J., Demuynck, S., Horiguchi, N.
المصدر:	2019 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2019 IEEE International. :29.2.1-29.2.4 Dec, 2019
Relation:	2019 IEEE International Electron Devices Meeting (IEDM)
قاعدة البيانات:	IEEE Xplore Digital Library