التفاصيل البيبلوغرافية
العنوان: |
Ge oxide scavenging and gate stack nitridation for strained Si0.7Ge0.3 pFinFETs enabling 35% higher mobility than Si |
المؤلفون: |
Arimura, H., Wostyn, K., Ragnarsson, L.-A., Capogreco, E., Chasin, A., Conard, T., Brus, S., Favia, P., Franco, J., Mitard, J., Demuynck, S., Horiguchi, N. |
المصدر: |
2019 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2019 IEEE International. :29.2.1-29.2.4 Dec, 2019 |
Relation: |
2019 IEEE International Electron Devices Meeting (IEDM) |
قاعدة البيانات: |
IEEE Xplore Digital Library |