Full Bottom Dielectric Isolation to Enable Stacked Nanosheet Transistor for Low Power and High Performance Applications

التفاصيل البيبلوغرافية
العنوان:	Full Bottom Dielectric Isolation to Enable Stacked Nanosheet Transistor for Low Power and High Performance Applications
المؤلفون:	Zhang, J., Frougier, J., Greene, A., Miao, X., Yu, L., Vega, R., Montanini, P., Durfee, C., Gaul, A., Pancharatnam, S., Adams, C., Wu, H., Zhou, H., Shen, T., Xie, R., Sankarapandian, M., Wang, J., Watanabe, K., Bao, R., Liu, X., Park, C., Shobha, H., Joseph, P., Kong, D., De La Pena, A. Arceo, Li, J., Conti, R., Dechene, D., Loubet, N., Chao, R., Yamashita, T., Robison, R., Basker, V., Zhao, K., Guo, D., Haran, B., Divakaruni, R., Bu, H.
المصدر:	2019 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2019 IEEE International. :11.6.1-11.6.4 Dec, 2019
Relation:	2019 IEEE International Electron Devices Meeting (IEDM)
قاعدة البيانات:	IEEE Xplore Digital Library