التفاصيل البيبلوغرافية
| العنوان: |
Imaging, Modeling and Engineering of Strain in Gate-All-Around Nanosheet Transitors |
| المؤلفون: |
Reboh, S., Coquand, R., Loubet, N., Bernier, N., Augendre, E., Chao, R., Li, J., Zhang, J., Muthinti, R., Boureau, V., Yamashita, T., Faynot, O. |
| المصدر: |
2019 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2019 IEEE International. :11.5.1-11.5.4 Dec, 2019 |
| Relation: |
2019 IEEE International Electron Devices Meeting (IEDM) |
| قاعدة البيانات: |
IEEE Xplore Digital Library |
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