Performance Maximization of In-Memory Reinforcement Learning with Variability-Controlled Hf1-xZrxO2 Ferroelectric Tunnel Junctions

التفاصيل البيبلوغرافية
العنوان: Performance Maximization of In-Memory Reinforcement Learning with Variability-Controlled Hf1-xZrxO2 Ferroelectric Tunnel Junctions
المؤلفون: Ota, K., Yamaguchi, M., Berdan, R., Marukame, T., Nishi, Y., Matsuo, K., Takahashi, K., Kamiya, Y., Miyano, S., Deguchi, J., Fujii, S., Saitoh, M.
المصدر: 2019 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2019 IEEE International. :6.2.1-6.2.4 Dec, 2019
Relation: 2019 IEEE International Electron Devices Meeting (IEDM)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781728140322
تدمد:2156017X
DOI:10.1109/IEDM19573.2019.8993564