مؤتمر
Low Von 17kV SiC IGBT assisted n-MOS Thyristor
العنوان: | Low Von 17kV SiC IGBT assisted n-MOS Thyristor |
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المؤلفون: | Matsunaga, S., Mizushima, T., Takenaka, K., Kiuchi, Y., Koyama, A., Yonezawa, Y., Okumura, H. |
المصدر: | 2019 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2019 IEEE International. :20.2.1-20.2.4 Dec, 2019 |
Relation: | 2019 IEEE International Electron Devices Meeting (IEDM) |
قاعدة البيانات: | IEEE Xplore Digital Library |
ردمك: | 9781728140322 |
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تدمد: | 2156017X |
DOI: | 10.1109/IEDM19573.2019.8993648 |