دورية أكاديمية
Large-Scale Fabrication of Submicrometer-Gate-Length MOSFETs With a Trilayer PtSe2 Channel Grown by Molecular Beam Epitaxy
| العنوان: | Large-Scale Fabrication of Submicrometer-Gate-Length MOSFETs With a Trilayer PtSe2 Channel Grown by Molecular Beam Epitaxy |
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| المؤلفون: | Xiong, K., Hilse, M., Li, L., Goritz, A., Lisker, M., Wietstruck, M., Kaynak, M., Engel-Herbert, R., Madjar, A., Hwang, J.C.M. |
| المصدر: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 67(3):796-801 Mar, 2020 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 00189383 15579646 |
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| DOI: | 10.1109/TED.2020.2966434 |