High frequency behaviour of electron transport in silicon and its implication for drain conductance of MOS transistors

التفاصيل البيبلوغرافية
العنوان:	High frequency behaviour of electron transport in silicon and its implication for drain conductance of MOS transistors
المؤلفون:	Prasad, B., George, P.J., Shekhar, C.
المصدر:	VLSI Design 2001. Fourteenth International Conference on VLSI Design VLSI design VLSI Design, 2001. Fourteenth International Conference on. :491-494 2001
Relation:	Proceedings of 14th International Conference on VLSI Design
قاعدة البيانات:	IEEE Xplore Digital Library