مؤتمر
High frequency behaviour of electron transport in silicon and its implication for drain conductance of MOS transistors
العنوان: | High frequency behaviour of electron transport in silicon and its implication for drain conductance of MOS transistors |
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المؤلفون: | Prasad, B., George, P.J., Shekhar, C. |
المصدر: | VLSI Design 2001. Fourteenth International Conference on VLSI Design VLSI design VLSI Design, 2001. Fourteenth International Conference on. :491-494 2001 |
Relation: | Proceedings of 14th International Conference on VLSI Design |
قاعدة البيانات: | IEEE Xplore Digital Library |
ردمك: | 0769508316 9780769508313 |
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تدمد: | 10639667 |
DOI: | 10.1109/ICVD.2001.902706 |