مؤتمر
Optimization of short channel effect by arsenic P-Halo implant through polysilicon gate for 0.12 um P-MOSFET
| العنوان: | Optimization of short channel effect by arsenic P-Halo implant through polysilicon gate for 0.12 um P-MOSFET |
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| المؤلفون: | Chen, C., Chang, C.Y., Chou, J.W., Huang, C.T., Lin, K.C., Yao-Chin Cheng, Chih-Yung Lin |
| المصدر: | Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503) Electron devices meeting - Hong Kong Electron Devices Meeting, 2000. Proceedings. 2000 IEEE Hong Kong. :44-47 2000 |
| Relation: | Proceedings 2000 IEEE Hong Kong Electron Devices Meeting |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 0780363043 9780780363045 |
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| DOI: | 10.1109/HKEDM.2000.904212 |