High Performance and Yield for Super Steep Retrograde Wells (SSRW) by Well Implant / Si-based Epitaxy on Advanced Technology FinFETs

التفاصيل البيبلوغرافية
العنوان:	High Performance and Yield for Super Steep Retrograde Wells (SSRW) by Well Implant / Si-based Epitaxy on Advanced Technology FinFETs
المؤلفون:	Rana, U., Brunco, D. P., Raman, S., Triyoso, D.H., Stoker, M.W., Johnson, J. B., Pantisano, L., Seo, K. D., Zhao, M., Reznicek, A., Krishnan, R., Moser, B., Freeman, J., Jang, L., Kaganer, E.
المصدر:	2019 Device Research Conference (DRC) Device Research Conference (DRC), 2019. :251-252 Jun, 2019
Relation:	2019 Device Research Conference (DRC)
قاعدة البيانات:	IEEE Xplore Digital Library