دورية أكاديمية

Oxide Edge Trap Density Extraction in Silicon Nanowire MOSFET From Tunnel Current Noise Measurement in Gated Diode Like Arrangement

التفاصيل البيبلوغرافية
العنوان: Oxide Edge Trap Density Extraction in Silicon Nanowire MOSFET From Tunnel Current Noise Measurement in Gated Diode Like Arrangement
المؤلفون: Kumar Sharma, D., Datta, A.
المصدر: IEEE Transactions on Device and Materials Reliability IEEE Trans. Device Mater. Relib. Device and Materials Reliability, IEEE Transactions on. 20(3):512-516 Sep, 2020
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
تدمد:15304388
15582574
DOI:10.1109/TDMR.2020.3000356