Improvement in Electrical Properties of A1/La2O3/ZrO2/ Gate Stack Deposited on LaON Passivated GaAs Substrate

التفاصيل البيبلوغرافية
العنوان: Improvement in Electrical Properties of A1/La2O3/ZrO2/ Gate Stack Deposited on LaON Passivated GaAs Substrate
المؤلفون: Barhate, Viral N., Agrawal, Khushabu S., Patil, Vilas S., Mahajan, Ashok M.
المصدر: 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Electron Devices Technology & Manufacturing Conference (EDTM), 2020 4th IEEE. :1-4 Apr, 2020
Relation: 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781728125398
DOI:10.1109/EDTM47692.2020.9117895