Effects of RTA and WSi/sub x/-polycide gate processes on MOSFET reliability for giga-bit scale DRAMs

التفاصيل البيبلوغرافية
العنوان: Effects of RTA and WSi/sub x/-polycide gate processes on MOSFET reliability for giga-bit scale DRAMs
المؤلفون: Donggun Park, Nak-Jin Son, Ji-Young Kim, Wonshik Lee
المصدر: 2000 IEEE International Integrated Reliability Workshop Final Report (Cat. No.00TH8515) Integrated reliability workshop Integrated Reliability Workshop Final Report, 2000 IEEE International. :125-128 2000
Relation: 2000 IEEE International Integrated Reliability Workshop Final Report
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:0780363922
9780780363922
DOI:10.1109/IRWS.2000.911918