دورية أكاديمية
Low-Frequency Noise Investigation of GaN/AlGaN Metal–Oxide–Semiconductor High-Electron-Mobility Field-Effect Transistor With Different Gate Length and Orientation
العنوان: | Low-Frequency Noise Investigation of GaN/AlGaN Metal–Oxide–Semiconductor High-Electron-Mobility Field-Effect Transistor With Different Gate Length and Orientation |
---|---|
المؤلفون: | Takakura, K., Putcha, V., Simoen, E., Alian, A.R., Peralagu, U., Waldron, N., Parvais, B., Collaert, N. |
المصدر: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 67(8):3062-3068 Aug, 2020 |
قاعدة البيانات: | IEEE Xplore Digital Library |
تدمد: | 00189383 15579646 |
---|---|
DOI: | 10.1109/TED.2020.3002732 |