Non-Isothermal Simulations to Optimize SiC MOSFETs for Enhanced Short-Circuit Ruggedness

التفاصيل البيبلوغرافية
العنوان: Non-Isothermal Simulations to Optimize SiC MOSFETs for Enhanced Short-Circuit Ruggedness
المؤلفون: Kim, Dongyoung, Morgan, Adam J, Yun, Nick, Sung, Woongje, Agarwal, Anant, Kaplar, Robert
المصدر: 2020 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2020 IEEE International. :1-6 Apr, 2020
Relation: 2020 IEEE International Reliability Physics Symposium (IRPS)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781728131993
تدمد:19381891
DOI:10.1109/IRPS45951.2020.9128324