مؤتمر
Physics of Degradation in SiC MOSFETs Stressed by Overvoltage and Overcurrent Switching
| العنوان: | Physics of Degradation in SiC MOSFETs Stressed by Overvoltage and Overcurrent Switching |
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| المؤلفون: | Kozak, Joseph P., Zhang, Ruizhe, Liu, Jingcun, Ngo, Khai D. T., Zhang, Yuhao |
| المصدر: | 2020 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2020 IEEE International. :1-6 Apr, 2020 |
| Relation: | 2020 IEEE International Reliability Physics Symposium (IRPS) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 9781728131993 |
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| تدمد: | 19381891 |
| DOI: | 10.1109/IRPS45951.2020.9128330 |