Circuit Reliability Analysis of RRAM-based Logic-in-Memory Crossbar Architectures Including Line Parasitic Effects, Variability, and Random Telegraph Noise

التفاصيل البيبلوغرافية
العنوان: Circuit Reliability Analysis of RRAM-based Logic-in-Memory Crossbar Architectures Including Line Parasitic Effects, Variability, and Random Telegraph Noise
المؤلفون: Zanotti, Tommaso, Puglisi, Francesco Maria, Pavan, Paolo
المصدر: 2020 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2020 IEEE International. :1-5 Apr, 2020
Relation: 2020 IEEE International Reliability Physics Symposium (IRPS)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781728131993
تدمد:19381891
DOI:10.1109/IRPS45951.2020.9128343