التفاصيل البيبلوغرافية
| العنوان: |
Analysis of 1.2 kV SiC SWITCH-MOS after Short-circuit Stress |
| المؤلفون: |
Okawa, Masataka, Kanamori, Taiga, Aiba, Ruito, Yano, Hiroshi, Iwamuro, Noriyuki, Harada, Shinsuke |
| المصدر: |
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2020 32nd International Symposium on. :74-77 Sep, 2020 |
| Relation: |
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) |
| قاعدة البيانات: |
IEEE Xplore Digital Library |
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