Monolithic 4-Terminal 1.2 kV/20 A 4H-SiC Bi-Directional Field Effect Transistor (BiDFET) with Integrated JBS Diodes

التفاصيل البيبلوغرافية
العنوان:	Monolithic 4-Terminal 1.2 kV/20 A 4H-SiC Bi-Directional Field Effect Transistor (BiDFET) with Integrated JBS Diodes
المؤلفون:	Han, Kijeong, Agarwal, Aditi, Kanale, Ajit, Baliga, B. Jayant, Bhattacharya, Subhashish, Cheng, Tzu-Hsuan, Hopkins, Douglas, Amarasinghe, Voshadhi, Ransom, John
المصدر:	2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2020 32nd International Symposium on. :242-245 Sep, 2020
Relation:	2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)
قاعدة البيانات:	IEEE Xplore Digital Library