دورية أكاديمية

Inaccurate Switching Loss Measurement of SiC MOSFET Caused by Probes: Modelization, Characterization, and Validation

التفاصيل البيبلوغرافية
العنوان: Inaccurate Switching Loss Measurement of SiC MOSFET Caused by Probes: Modelization, Characterization, and Validation
المؤلفون: Zeng, Z., Wang, J., Wang, L., Yu, Y., Ou, K.
المصدر: IEEE Transactions on Instrumentation and Measurement IEEE Trans. Instrum. Meas. Instrumentation and Measurement, IEEE Transactions on. 70:1-14 2021
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
تدمد:00189456
15579662
DOI:10.1109/TIM.2020.3024356