Gradual Resistive Switching in Electron Beam Irradiated ReS2 Transistor and its Application as Electronic Synapse

التفاصيل البيبلوغرافية
العنوان: Gradual Resistive Switching in Electron Beam Irradiated ReS2 Transistor and its Application as Electronic Synapse
المؤلفون: Li, Sifan, Li, Bochang, Feng, Xuewei, Chen, Li, Li, Yesheng, Huang, Li, Gong, Xiao, Fong, Xuanyao, Ang, Kah-Wee
المصدر: 2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) VLSI Technology, Systems and Applications (VLSI-TSA), 2020 International Symposium on. :157-158 Aug, 2020
Relation: 2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781728142326
DOI:10.1109/VLSI-TSA48913.2020.9203618