TCAD-Assisted MultiPhysics Modeling & Simulation for Accelerating Silicon Quantum Dot Qubit Design

التفاصيل البيبلوغرافية
العنوان: TCAD-Assisted MultiPhysics Modeling & Simulation for Accelerating Silicon Quantum Dot Qubit Design
المؤلفون: Mohiyaddin, F. A., Simion, G., Stuyck, N. I. Dumoulin, Li, R., Elsayed, A., Shehata, M., Kubicek, S., Godfrin, C., Chan, B. T., Jussot, J., ubotaru, F. C, Brebels, S., Bufler, F. M., Eneman, G., Weckx, P., Matagne, P., Spessot, A., Govoreanu, B., Radu, I. P.
المصدر: 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Simulation of Semiconductor Processes and Devices (SISPAD), 2020 International Conference o. :253-256 Sep, 2020
Relation: 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9784863487635
تدمد:19461577
DOI:10.23919/SISPAD49475.2020.9241612