Impact of Random Phase Distribution in 3D Vertical NAND Architecture of Ferroelectric Transistors on In-Memory Computing

التفاصيل البيبلوغرافية
العنوان: Impact of Random Phase Distribution in 3D Vertical NAND Architecture of Ferroelectric Transistors on In-Memory Computing
المؤلفون: Choe, Gihun, Shim, Wonbo, Hur, Jae, Khan, Asif Islam, Yu, Shimeng
المصدر: 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Simulation of Semiconductor Processes and Devices (SISPAD), 2020 International Conference o. :165-168 Sep, 2020
Relation: 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9784863487635
تدمد:19461577
DOI:10.23919/SISPAD49475.2020.9241618