A Modeling Study on Performance of a CNOT Gate Devices based on Electrode-driven Si DQD Structures

التفاصيل البيبلوغرافية
العنوان: A Modeling Study on Performance of a CNOT Gate Devices based on Electrode-driven Si DQD Structures
المؤلفون: Ryu, Hoon, Kang, Ji-Hoon
المصدر: 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Simulation of Semiconductor Processes and Devices (SISPAD), 2020 International Conference o. :261-263 Sep, 2020
Relation: 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9784863487635
تدمد:19461577
DOI:10.23919/SISPAD49475.2020.9241633