Complementary FET Device and Circuit Level Evaluation Using Fin-Based and Sheet-Based Configurations Targeting 3nm Node and Beyond

التفاصيل البيبلوغرافية
العنوان: Complementary FET Device and Circuit Level Evaluation Using Fin-Based and Sheet-Based Configurations Targeting 3nm Node and Beyond
المؤلفون: Jiang, Liu, Pal, Ashish, Bazizi, El Mehdi, Saremi, Mehdi, Ren, He, Alexander, Blessy, Ayyagari-Sangamalli, Buvna
المصدر: 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Simulation of Semiconductor Processes and Devices (SISPAD), 2020 International Conference o. :323-326 Sep, 2020
Relation: 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9784863487635
تدمد:19461577
DOI:10.23919/SISPAD49475.2020.9241655