التفاصيل البيبلوغرافية
| العنوان: |
Analysis of the Effects of Boron Transient Enhanced Diffusion on Threshold Voltage Mismatch in Steep Retrograde Doping NMOSFETs with Inserted Oxygen Layers |
| المؤلفون: |
Fujii, Shuntaro, Takeuchi, Hideki, Morita, Soichi, Yagi, Tatsushi, Hamada, Shohei, Sakamoto, Toshiro, Kawaguchi, Shinji, Ishigami, Naoki, Okamoto, Atsushi, Ikeda, Shuji, Wong, Hiu-Yung, Mears, Robert J., Miyazaki, Tsutomu |
| المصدر: |
2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Physical and Failure Analysis of Integrated Circuits (IPFA), 2020 IEEE International Symposium on the. :1-4 Jul, 2020 |
| Relation: |
2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) |
| قاعدة البيانات: |
IEEE Xplore Digital Library |
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