Effects of X-ray Irradiation on Vertical GaN-on-GaN Schottky Barrier Diode Biased on the Applied Voltage

التفاصيل البيبلوغرافية
العنوان: Effects of X-ray Irradiation on Vertical GaN-on-GaN Schottky Barrier Diode Biased on the Applied Voltage
المؤلفون: Li, Xiao-Xi, Chen, Jin-Xin, Huang, Wei, Ji, Zhigang, Feng, Zhi-Hong, Wu, Su-Zhen, Xiao, Zhi-Qiang, Lu, Hong-Liang
المصدر: 2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Physical and Failure Analysis of Integrated Circuits (IPFA), 2020 IEEE International Symposium on the. :1-4 Jul, 2020
Relation: 2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781728161693
تدمد:19461550
DOI:10.1109/IPFA49335.2020.9261085