مؤتمر
Industrially Applicable Read Disturb Model and Performance on Mega-Bit 28nm Embedded RRAM
| العنوان: | Industrially Applicable Read Disturb Model and Performance on Mega-Bit 28nm Embedded RRAM |
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| المؤلفون: | Yang, Chang-Feng, Wu, Chun-Yu, Yang, Ming-Han, Wang, Wayne, Yang, Ming-Ta, Chien, Ta-Chun, Fan, Vincent, Tsai, Shih-Chi, Lee, Yung-Huei, Chu, Wen-Ting, Hung, Arthur |
| المصدر: | 2020 IEEE Symposium on VLSI Technology VLSI Technology, 2020 IEEE Symposium on. :1-2 Jun, 2020 |
| Relation: | 2020 IEEE Symposium on VLSI Technology |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 9781728164601 |
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| تدمد: | 21589682 |
| DOI: | 10.1109/VLSITechnology18217.2020.9265060 |