دورية أكاديمية
Surface Recombination and Excess Current of Anode-Gate Mesa Sidewall in 4H-SiC Gate Turn-Off Thyristor
| العنوان: | Surface Recombination and Excess Current of Anode-Gate Mesa Sidewall in 4H-SiC Gate Turn-Off Thyristor |
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| المؤلفون: | Xiang, A. |
| المصدر: | IEEE Transactions on Nanotechnology IEEE Trans. Nanotechnology Nanotechnology, IEEE Transactions on. 20:28-32 2021 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 1536125X 19410085 |
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| DOI: | 10.1109/TNANO.2020.3043235 |