مؤتمر
Novel RTA technique for large diameter GaAs wafers managing to minimize both dopant diffusion and slip formation
| العنوان: | Novel RTA technique for large diameter GaAs wafers managing to minimize both dopant diffusion and slip formation |
|---|---|
| المؤلفون: | Sakurada, T., Kiyama, M., Nakajima, S., Tatsumi, M. |
| المصدر: | Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Indium phosphide and related materials Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On. :425-427 2001 |
| Relation: | Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 0780367006 9780780367005 |
|---|---|
| تدمد: | 10928669 |
| DOI: | 10.1109/ICIPRM.2001.929149 |