CSI based Analytical Model for evaluation of DC Characteristics in AlGaN/GaN/AlInN MOS-HEMT using high-k dielectrics

التفاصيل البيبلوغرافية
العنوان: CSI based Analytical Model for evaluation of DC Characteristics in AlGaN/GaN/AlInN MOS-HEMT using high-k dielectrics
المؤلفون: Sandeep, V., Pravin, J. Charles, Babu, A. Ramesh, Prajoon, P.
المصدر: 2020 4th International Conference on Electronics, Communication and Aerospace Technology (ICECA) Electronics, Communication and Aerospace Technology (ICECA), 2020 4th International Conference on. :471-478 Nov, 2020
Relation: 2020 4th International Conference on Electronics, Communication and Aerospace Technology (ICECA)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781728163864
9781728163871
DOI:10.1109/ICECA49313.2020.9297448