Improving GaN-based HEMTs Performance by Gate Recess Technique

التفاصيل البيبلوغرافية
العنوان: Improving GaN-based HEMTs Performance by Gate Recess Technique
المؤلفون: Lee, Hsin-Che, Lee, Chen-Che, Lee, Hsin-Jung, Lee, Wei-Yu, Chuang, Wei-Ching
المصدر: 2020 IEEE Eurasia Conference on IOT, Communication and Engineering (ECICE) IOT, Communication and Engineering (ECICE), 2020 IEEE Eurasia Conference on. :133-135 Oct, 2020
Relation: 2020 IEEE Eurasia Conference on IOT, Communication and Engineering (ECICE)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781728180601
DOI:10.1109/ECICE50847.2020.9301926