Impact of Switching Variability of 65nm CMOS Integrated Hafnium Dioxide-based ReRAM Devices on Distinct Level Operations

التفاصيل البيبلوغرافية
العنوان:	Impact of Switching Variability of 65nm CMOS Integrated Hafnium Dioxide-based ReRAM Devices on Distinct Level Operations
المؤلفون:	Liehr, Maximilian, Hazra, Jubin, Beckmann, Karsten, Rafiq, Sarah, Cady, Nathaniel
المصدر:	2020 IEEE International Integrated Reliability Workshop (IIRW) Integrated Reliability Workshop (IIRW), 2020 IEEE International. :1-4 Oct, 2020
Relation:	2020 IEEE International Integrated Reliability Workshop (IIRW)
قاعدة البيانات:	IEEE Xplore Digital Library