التفاصيل البيبلوغرافية
العنوان: |
Impact of Switching Variability of 65nm CMOS Integrated Hafnium Dioxide-based ReRAM Devices on Distinct Level Operations |
المؤلفون: |
Liehr, Maximilian, Hazra, Jubin, Beckmann, Karsten, Rafiq, Sarah, Cady, Nathaniel |
المصدر: |
2020 IEEE International Integrated Reliability Workshop (IIRW) Integrated Reliability Workshop (IIRW), 2020 IEEE International. :1-4 Oct, 2020 |
Relation: |
2020 IEEE International Integrated Reliability Workshop (IIRW) |
قاعدة البيانات: |
IEEE Xplore Digital Library |