Negative capacitance GaN HEMT with improved subthreshold swing and transconductance

التفاصيل البيبلوغرافية
العنوان: Negative capacitance GaN HEMT with improved subthreshold swing and transconductance
المؤلفون: Zhu, KM., Wei, JH., Wan, J.
المصدر: 2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2019 IEEE. :1-2 Oct, 2019
Relation: 2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781728135236
DOI:10.1109/S3S46989.2019.9320724