دورية أكاديمية
Impact of the Nonlinear Dielectric Hysteresis Properties of a Charge Trap Layer in a Novel Hybrid High-Speed and Low-Power Ferroelectric or Antiferroelectric HSO/HZO Boosted Charge Trap Memory
| العنوان: | Impact of the Nonlinear Dielectric Hysteresis Properties of a Charge Trap Layer in a Novel Hybrid High-Speed and Low-Power Ferroelectric or Antiferroelectric HSO/HZO Boosted Charge Trap Memory |
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| المؤلفون: | Ali, T., Mertens, K., Olivo, R., Rudolph, M., Oehler, S., Kuhnel, K., Lehninger, D., Muller, F., Hoffmann, R., Schramm, P., Biedermann, K., Metzger, J., Binder, R., Czernohorsky, M., Kampfe, T., Muller, J., Seidel, K., Van Houdt, J., Eng, L.M. |
| المصدر: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 68(4):2098-2106 Apr, 2021 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 00189383 15579646 |
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| DOI: | 10.1109/TED.2021.3049758 |