دورية أكاديمية
Accuracy of Three Interterminal Capacitance Models for SiC Power MOSFETs Under Fast Switching
| العنوان: | Accuracy of Three Interterminal Capacitance Models for SiC Power MOSFETs Under Fast Switching |
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| المؤلفون: | Stark, R., Tsibizov, A., Nain, N., Grossner, U., Kovacevic-Badstuebner, I. |
| المصدر: | IEEE Transactions on Power Electronics IEEE Trans. Power Electron. Power Electronics, IEEE Transactions on. 36(8):9398-9410 Aug, 2021 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 08858993 19410107 |
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| DOI: | 10.1109/TPEL.2021.3053330 |