مؤتمر
Recessed trench MOSFET process without critical alignments makes very high densities possible
| العنوان: | Recessed trench MOSFET process without critical alignments makes very high densities possible |
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| المؤلفون: | Finney, A., Evans, J., Blair, P., Earnshaw, J., Jerred, P., Lowe, K., Mottram, D., Wolstenholme, N., Wood, A. |
| المصدر: | Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216) Power semiconductor devices and ICs Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on. :283-286 2001 |
| Relation: | Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 4886860567 9784886860569 |
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| تدمد: | 10636854 |
| DOI: | 10.1109/ISPSD.2001.934610 |