Wide cell pitch 1200 V NPT CSTBTs with short circuit ruggedness

التفاصيل البيبلوغرافية
العنوان: Wide cell pitch 1200 V NPT CSTBTs with short circuit ruggedness
المؤلفون: Nakamura, H., Nakamura, K., Kusunoki, S., Takahashi, H., Tomomatsu, Y., Harada, M.
المصدر: Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216) Power semiconductor devices and ICs Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on. :299-302 2001
Relation: Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:4886860567
9784886860569
تدمد:10636854
DOI:10.1109/ISPSD.2001.934614