دورية أكاديمية
Comparison of Single-Event Transients in an Epitaxial Silicon Diode Resulting From Heavy-Ion-, Focused X-Ray-, and Pulsed Laser-Induced Charge Generation
| العنوان: | Comparison of Single-Event Transients in an Epitaxial Silicon Diode Resulting From Heavy-Ion-, Focused X-Ray-, and Pulsed Laser-Induced Charge Generation |
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| المؤلفون: | Ryder, K.L., Ryder, L.D., Sternberg, A.L., Kozub, J.A., Zhang, E.X., LaLumondiere, S.D., Monahan, D.M., Bonsall, J.P., Khachatrian, A., Buchner, S.P., McMorrow, D., Hales, J.M., Zhao, Y., Wang, L., Wang, C., Weller, R.A., Schrimpf, R.D., Weiss, S.M., Reed, R.A. |
| المصدر: | IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 68(5):626-633 May, 2021 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 00189499 15581578 |
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| DOI: | 10.1109/TNS.2021.3060339 |