التفاصيل البيبلوغرافية
| العنوان: |
25.4 A 20nm 6GB Function-In-Memory DRAM, Based on HBM2 with a 1.2TFLOPS Programmable Computing Unit Using Bank-Level Parallelism, for Machine Learning Applications |
| المؤلفون: |
Kwon, Young-Cheon, Lee, Suk Han, Lee, Jaehoon, Kwon, Sang-Hyuk, Ryu, Je Min, Son, Jong-Pil, Seongil, O, Yu, Hak-Soo, Lee, Haesuk, Kim, Soo Young, Cho, Youngmin, Kim, Jin Guk, Choi, Jongyoon, Shin, Hyun-Sung, Kim, Jin, Phuah, BengSeng, Kim, HyoungMin, Song, Myeong Jun, Choi, Ahn, Kim, Daeho, Kim, SooYoung, Kim, Eun-Bong, Wang, David, Kang, Shinhaeng, Ro, Yuhwan, Seo, Seungwoo, Song, JoonHo, Youn, Jaeyoun, Sohn, Kyomin, Kim, Nam Sung |
| المصدر: |
2021 IEEE International Solid-State Circuits Conference (ISSCC) Solid-State Circuits Conference (ISSCC), 2021 IEEE International. 64:350-352 Feb, 2021 |
| Relation: |
2021 IEEE International Solid-State Circuits Conference (ISSCC) |
| قاعدة البيانات: |
IEEE Xplore Digital Library |
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