التفاصيل البيبلوغرافية
العنوان: |
Advances in Research on 300mm Gallium Nitride-on-Si(111) NMOS Transistor and Silicon CMOS Integration |
المؤلفون: |
Wui Then, Han, Radosavljevic, M., Desai, N., Ehlert, R., Hadagali, V., Jun, K., Koirala, P., Minutillo, N., Kotlyar, R., Oni, A., Qayyum, M., Rode, J., Sandford, J., Talukdar, T., Thomas, N., Vora, H., Wallace, P., Weiss, M., Weng, X., Fischer, P. |
المصدر: |
2020 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2020 IEEE International. :27.3.1-27.3.4 Dec, 2020 |
Relation: |
2020 IEEE International Electron Devices Meeting (IEDM) |
قاعدة البيانات: |
IEEE Xplore Digital Library |