Advances in Research on 300mm Gallium Nitride-on-Si(111) NMOS Transistor and Silicon CMOS Integration

التفاصيل البيبلوغرافية
العنوان:	Advances in Research on 300mm Gallium Nitride-on-Si(111) NMOS Transistor and Silicon CMOS Integration
المؤلفون:	Wui Then, Han, Radosavljevic, M., Desai, N., Ehlert, R., Hadagali, V., Jun, K., Koirala, P., Minutillo, N., Kotlyar, R., Oni, A., Qayyum, M., Rode, J., Sandford, J., Talukdar, T., Thomas, N., Vora, H., Wallace, P., Weiss, M., Weng, X., Fischer, P.
المصدر:	2020 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2020 IEEE International. :27.3.1-27.3.4 Dec, 2020
Relation:	2020 IEEE International Electron Devices Meeting (IEDM)
قاعدة البيانات:	IEEE Xplore Digital Library