A Novel Super-Steep Slope (~0.015mV/dec) Gate-Controlled Thyristor (GCT) Functional Memory Device to Support the Integrate-and-Fire Circuit for Spiking Neural Networks

التفاصيل البيبلوغرافية
العنوان:	A Novel Super-Steep Slope (~0.015mV/dec) Gate-Controlled Thyristor (GCT) Functional Memory Device to Support the Integrate-and-Fire Circuit for Spiking Neural Networks
المؤلفون:	Sung, Cheng-Lin, Lue, Hang-Ting, Wei, Ming-Liang, Ho, Shu-Yin, Hu, Han-Wen, Du, Pei-Ying, Chen, Wei-Chen, Lo, Chieh Roger, Yeh, Teng-Hao, Wang, Keh-Chung, Lu, Chih-Yuan
المصدر:	2020 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2020 IEEE International. :21.3.1-21.3.4 Dec, 2020
Relation:	2020 IEEE International Electron Devices Meeting (IEDM)
قاعدة البيانات:	IEEE Xplore Digital Library