HfO2-based FeFET and FTJ for Ferroelectric-Memory Centric 3D LSI towards Low-Power and High-Density Storage and AI Applications

التفاصيل البيبلوغرافية
العنوان:	HfO2-based FeFET and FTJ for Ferroelectric-Memory Centric 3D LSI towards Low-Power and High-Density Storage and AI Applications
المؤلفون:	Saitoh, Masumi, Ichihara, Reika, Yamaguchi, Marina, Suzuki, Kunifumi, Takano, Keisuke, Akari, Keisuke, Takahashi, Kota, Kamiya, Yuta, Matsuo, Kazuhiro, Kamimuta, Yuuichi, Sakuma, Kiwamu, Ota, Kensuke, Fujii, Shosuke
المصدر:	2020 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2020 IEEE International. :18.1.1-18.1.4 Dec, 2020
Relation:	2020 IEEE International Electron Devices Meeting (IEDM)
قاعدة البيانات:	IEEE Xplore Digital Library