Advancing Static Performance and Ruggedness of 600 V SiC MOSFETs: Experimental Analysis and Simulation Study

التفاصيل البيبلوغرافية
العنوان: Advancing Static Performance and Ruggedness of 600 V SiC MOSFETs: Experimental Analysis and Simulation Study
المؤلفون: Kim, Dongyoung, Yun, Nick, Sung, Woongje
المصدر: 2021 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2021 IEEE International. :1-4 Mar, 2021
Relation: 2021 IEEE International Reliability Physics Symposium (IRPS)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781728168937
تدمد:19381891
DOI:10.1109/IRPS46558.2021.9405109